The book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent derivation of interface or boundary conditions for semiconductor device simulation. It combines a review of existing interface charge transport models with original developments. A unified representation of charge transport at semiconductor interfaces is introduced. Models for the most important interfaces are derived, classified within the unique modelling framework, and discussed in the context of device simulation. Discretization methods for numerical solution techniques are presented.
|Statement||by Dietmar Schroeder|
|Series||Computational Microelectronics, Computational Microelectronics|
|LC Classifications||TK7800-8360, TK7874-7874.9|
|The Physical Object|
|Format||[electronic resource] /|
|Pagination||1 online resource (xi, 225 p.)|
|Number of Pages||225|
|ISBN 10||370917368X, 3709166446|
|ISBN 10||9783709173688, 9783709166444|
This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces. Modelling of interface carrier transport for device simulation. [Dietmar Schroeder] -- The book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. For the simulation of semiconductor devices, models of the physical transport processes at the interfaces between different materials (semiconductors, metals, insulators) must be available. Usually, these models are formulated as boundary or interface conditions for the transport by: 3.
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models. in HBTs (see Fig. 1). Device simulations should include models to take into account the carrier energy separately by solving the energy balance equation self-consistently with the classical drift-diﬀusion model. Reduced length of carrier transport path also drastically decre-ases the probability of carrier scattering. Almost scattering free. case, and describes the fundamental modeling & simulation tools that are considered critical to support the daily operation of the urban transportation system. Index Terms — Geographical Information Systems, Intelligent Transportation Systems, modelling, traffic microsimulation. I. technologically advanced methods to deal with operations T. PISCES-2ET – 2D Device Simulation for Si and Heterostructures 5 CHAPTER 2 DUET Carrier Transport Model The DUET model, a carrier transport model in semiconductors, is developed based on the moment approach to solving Boltzmann Transport Equation (BTE). It uses six state variables to describe the status of a semiconductor device.
However, these simulations are only as good as the device models and parameters used in the simulations. Wrong models yield unreliable results. Introduction to Device Modeling and Circuit Simulation links electronic device modeling to simulation of these devices Author: Tor A. Fjeldly. Diffusion of carriers is obtained by creating a carrier density gradient. Such gradient can be obtained by varying the doping density in a semiconductor or by applying a thermal gradient. Both carrier transport mechanisms are related since the same particles and scattering mechanisms are involved. However, for SiC devices TCAD simulation currently is a big challenge. Most of the simulation models were developed for silicon, and, thus, can not adequately describe the transport properties of SiC devices. Moreover, because of a high density of interface traps at the SiC/SiO 2 interface, which strongly degrade the channel mobilityFile Size: 3MB. Depending on the device that you're modeling, the Schottky junction between gate and drain may turn on with a large gate voltage. That is, when the gate voltage is 2V, if the Schottky junction turns on, the gate current can flow to drain.